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IEC 63068-2
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 2: Test method for defects using optical inspection
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IEC 63068-2
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 2: Test method for defects using optical inspection
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6480-5
– 2 – IEC 63068-2:2019 © IEC 2019
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Optical inspection method . 11
4.1 General . 11
4.2 Principle . 12
4.3 Requirements . 12
4.3.1 Illumination . 12
4.3.2 Wafer positioning and focusing . 13
4.3.3 Image capturing . 13
4.3.4 Image processing . 13
4.3.5 Image analysis . 13
4.3.6 Image evaluation . 13
4.3.7 Documentation . 13
4.4 Parameter settings . 14
4.4.1 General . 14
4.4.2 Parameter setting process . 14
4.5 Procedure . 14
4.6 Evaluation . 14
4.6.1 General . 14
4.6.2 Mean width of planar and volume defects . 14
4.6.3 Evaluation process . 15
4.7 Precision . 15
4.8 Test report . 15
Annex A (informative) Optical inspection images of defects . 16
A.1 General . 16
A.2 Micropipe . 16
A.3 TSD . 17
A.4 TED . 17
A.5 BPD . 18
A.6 Scratch trace . 18
A.7 Stacking fault . 19
A.8 Propagated stacking fault . 19
A.9 Stacking fault complex . 20
A.10 Polytype inclusion . 21
A.11 Particle inclusion . 23
A.12 Bunched-step segment . 23
Bibliography . 25
Figure A.1 – Micropipe . 16
Figure A.2 – TSD . 17
Figure A.3 – TED . 18
Figure A.4 – Scratch trace . 18
Figure A.5 – Stacking fault . 19
Figure A.6 – Propagated stacking fault . 20
Figure A.7 – Stacking fault complex . 21
Figure A.8 – Polytype inclusion . 22
Figure A.9 – Particle inclusion . 23
Figure A.10 – Bunched-step segment . 24
– 4 – IEC 63068-2:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS IN SILICON
CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES –
Part 2: Test method for defects using optical inspection
FOREWORD
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International Standard IEC 63068-2 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this International Standard is based on the following documents:
CDV Report on voting
47/2475/CDV 47/2522A/RVC
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 63068 series, published under the general title Semiconductor
devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer
for power devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.
– 6 – IEC 63068-2:2019 © IEC 2019
INTRODUCTION
Silicon carbide (SiC) is widely used as a semiconductor material for next-generation power
semiconductor devices. SiC, as compared with
...