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IEC 62047-31
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 31: Four-point bending test method for interfacial adhesion energy of
layered MEMS materials
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IEC 62047-31
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 31: Four-point bending test method for interfacial adhesion energy of
layered MEMS materials
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6717-2
– 2 – IEC 62047-31:2019 © IEC 2019
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions, symbols and designations . 5
3.1 Terms and definitions . 5
3.2 Symbols and designations . 6
4 Test piece . 6
4.1 General . 6
4.2 Shape of a test piece . 6
4.3 Measurement of dimensions . 7
4.4 Evaluation of energy release rate . 7
5 Testing method and test apparatus . 7
5.1 Test principle . 7
5.2 Test machine . 8
5.3 Test procedure . 8
5.4 Test environment . 9
6 Test report . 9
Annex A (informative) Failure modes during the four-point bending test . 10
A.1 General . 10
A.2 Some failure modes . 10
Bibliography . 12
Figure 1 – Four-point bending test piece . 6
Figure 2 – Picture of a four-point bending fixture . 9
Figure A.1 – Several failure modes during the four-point bending test . 11
Table 1 – Symbols and designations of a test piece . 6
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 31: Four-point bending test method for interfacial
adhesion energy of layered MEMS materials
FOREWORD
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International Standard IEC 62047-31 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/326/FDIS 47F/331RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
– 4 – IEC 62047-31:2019 © IEC 2019
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 31: Four-point bending test method for interfacial
adhesion energy of layered MEMS materials
1 Scope
This part of IEC 62047 specifies a four-point bending test method for measuring interfacial
adhesion energy of the weakest interface in the layered micro-electromechanical systems
(MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are
many layered material interfaces, and their adhesion energies are critical to the reliability of
the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a
test piece of layered MEMS device, and the interfacial adhesion energy is measured from the
critical bending moment for the steady state cracking in the weakest interface. This test
method applies to MEMS devices with thin film layers deposited on semiconductor substrates.
The total thickness of the thin film layers should be 100 times less than the thickness of a
supporting substrate (typically a silicon wafer piece).
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
There are no normative references in this document.
3 Terms, definitions, symbols and designations
3.1 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1.1
energy release rate
G
strain energy per unit surface area, which is released during the incremental growth of a crack
Note 1 to entry: The energy release rate can be regarded as the crack driving force, and its unit is given in J/m .
3.1.2
interfacial adhesion energy
G
C
critical energy release rate at the moment of crack extension
Note 1 to entry: Its unit is given in: J/m .
– 6 – IEC 62047-31:2019 © IEC 2019
3.2 Symbols and designations
The shape of the test piece and the symbols are presented in Figure 1 and Table 1,
respectively. The overall shape of the test piece is similar to a sandwiched cantilever beam,
and it should have a pre-crack or a notch for crack initiation. After initiation of the crack, the
crack follows the weakest interface in the layered materials system.
Key
1 layered material
2 notched pre-crack
3 interfacial crack
Figure 1 – Four-point bending test piece
Table 1 – Symbols and designations of a test piece
Symbol Unit Designation
L mm Spacing between two adjacent pins
b mm Width
h μm Thickness of the supporting structure
P N Force for driving crack
4 Test piece
4.1 General
The test piece for the layered MEMS materials shall be prepared using the same fabrication
process that applies to actual MEMS devices. Machining of the test piece shall b
...