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IEC TS 62607-8-1
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 8-1: Nano-enabled metal-oxide interfacial devices – Test method for defect
states by thermally stimulated current
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IEC TS 62607-8-1
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 8-1: Nano-enabled metal-oxide interfacial devices – Test method for defect
states by thermally stimulated current
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120; 07.030 ISBN 978-2-8322-7978-6
– 2 – IEC TS 62607-8-1:2020 © IEC 2020
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms, definitions, and abbreviated terms . 7
3.1 Terms and definitions . 7
3.2 Abbreviated terms . 8
4 Measurement of TSC . 8
4.1 General . 8
4.2 Sample preparation . 8
4.3 Experimental procedures . 8
5 Reporting data . 9
6 Data analysis / interpretation of results . 9
6.1 General . 9
6.2 Peak method [1] . 10
6.3 T –T method [2] [3] . 10
start stop
6.4 Initial rise method [4] . 10
Annex A (informative) Case study . 11
A.1 TSC measurement of Au/GaAs (reference sample) . 11
A.1.1 General . 11
A.1.2 Estimating activation energy of defect states by peak method. 14
A.2 TSC measurement of Ir/Ta O . 18
2 5
A.2.1 General . 18
A.2.2 Estimating activation energy of defect states by Peak method . 23
Annex B (informative) Possible methods to analyse TSC spectra . 26
B.1 Peak method . 26
B.2 T –T method . 26
start stop
B.3 Initial rise method . 27
Bibliography . 29
Figure 1 – Structure of TSC measurement device . 8
Figure 2 – Visualization of TSC measurement sequence . 9
Figure A.1 – Photos of (a) the Au electrode configuration on GaAs reference sample,
and (b) sample setting . 11
Figure A.2 – Structure of TSC measurement device . 12
Figure A.3 – TSC data comparison by samples . 13
Figure A.4 – TSC data comparison by heating rate . 14
Figure A.5 – Determination of TSC peak positions using the second derivative curves . 16
2 4
Figure A.6 – Arrhenius plots of (a) ln(T /β) vs. 1/T and (b) ln(T /β) vs. 1/T . 17
m m m m
Figure A.7 – TSC data comparison by samples . 19
Figure A.8 – TSC data comparison of Sample A by heating rate . 20
Figure A.9 – TSC data comparison of Sample B by heating rate . 20
Figure A.10 – TSC data comparison of Sample C by heating rate . 21
Figure A.11 – TSC data comparison by carrier injection method (Samples A, B and C) . 22
Figure A.12 – Samples A, B and C: Determination of TSC peak positions using the
second derivative curves . 23
Figure A.13 – Arrhenius plots for TA1, Sample A . 24
Figure B.1 – Peak method . 26
Figure B.2 – T –T method . 27
start stop
Figure B.3 – Determination of trap level energy through initial rise method . 28
Table 1 – TSC measurement sequence steps and parameters . 9
Table A.1 – TSC measurement sequence steps and parameters / case study . 13
Table A.2 – Activation energies of T1 to T6 for y = ln (T /β) . 17
m
Table A.3 – Activation energies of T1 to T6 for y = ln (T /β) . 17
m
Table A.4 – TSC measurement sequence steps and parameters / case study (2) . 18
Table A.5 – Conditions of Ta O sputtering deposition . 19
2 5
Table A.6 – Activation energies of Samples A, B and C . 24
– 4 – IEC TS 62607-8-1:2020 © IEC 2020
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 8-1: Nano-enabled metal-oxide interfacial devices –
Test method for defect states by thermally stimulated current
FOREWORD
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IEC TS 62607-8-1, which is a Technical Specification, has been prepared by IEC technical
committee 113: Nanotechnology for electrotechnical products and systems.
The text of this Technical Specification is based on the following documents:
DTS Report on voting
113/493/DTS 113/510/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in
...