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IEC TS 62607-2-4
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 2-4: Carbon nanotube materials – Test methods for determination
of resistance of individual carbon nanotubes
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IEC TS 62607-2-4
Edition 1.0 2020-04
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 2-4: Carbon nanotube materials – Test methods for determination
of resistance of individual carbon nanotubes
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.030; 07.120 ISBN 978-2-8322-7968-7
– 2 – IEC TS 62607-2-4:2020 © IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms, definitions, and abbreviated terms . 6
3.1 Terms and definitions . 6
3.2 Abbreviated terms . 8
4 Measurement of resistance . 8
4.1 General . 8
4.2 Method for processing and fabrication of DUT . 8
4.3 4-probe measurement . 8
5 Reporting data . 9
6 Data analysis / interpretation of results (Annex A) . 10
6.1 General . 10
6.2 Measurement error . 10
6.3 Need to prepare the proper electric probing circuit . 11
6.4 Need to prepare the proper substrate and electric contact . 11
6.5 Dynamic range . 11
6.6 Current density . 11
6.7 Voltage bias of the substrate . 11
6.8 Measurement in vacuum . 11
Annex A (informative) Case study . 12
A.1 4-probe measurement of MWCNT . 12
A.1.1 I-V measurements of MWCNT. 12
A.1.2 Fabrication process information of MWCNT and DUT . 14
A.2 4-probe measurement of SWCNT . 15
A.2.1 I-V measurements of SWCNT . 15
A.2.2 Fabrication process information of SWCNT and DUT . 18
Bibliography . 19
Figure 1 – 4-probe measurement in a SEM chamber . 9
Figure 2 – A crooked/curved CNT under measurement . 10
Figure 3 – I-V measurement of a sufficiently straight CNT . 11
Figure A.1 – I-V measurements of a CNT with different lengths, L. 12
Figure A.2 – I-V relationships for different CNT lengths – 2-probe measurement . 13
Figure A.3 – I-V relationships for different CNT lengths – 2-probe measurement (0 to 0,5 V) 13
Figure A.4 – I-V relationships for different CNT lengths – 4-probe measurement . 14
Figure A.5 – Resistance vs. CNT length . 14
Figure A.6 – I-V relationships of SWCNT . 15
Figure A.7 – Resistance vs. SWCNT length . 16
Figure A.8 – I-V relationships of SWCNT under the electron-beam exposure . 17
Figure A.9 – Breakdown characteristics of SWCNT . 18
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 2-4: Carbon nanotube materials – Test methods for determination
of resistance of individual carbon nanotubes
FOREWORD
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Technical Specifications are subject to review within three years of publication to decide whether
they can be transformed into International Standards.
IEC TS 62607-2-4, which is a Technical Specification, has been prepared by IEC technical
committee 113: Nanotechnology for electrotechnical products and systems.
– 4 – IEC TS 62607-2-4:2020 © IEC 2020
The text of this Technical Specification is based on the following documents:
DTS Report on voting
113/492/DTS 113/509/RVDTS
Full information on the voting for the approval of this Technical Specification can be found in the
report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing –
Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to the
specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
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INTRODUCTION
Carbon nanotubes (CNTs) are one-dimensional conductors that exhibit a rich variety of
low-dimensional electric transport phenomena. Ballistic conduction is the typical nano-enabled
characteristic that possesses the largest potential for industrial application. In the field of
nanoelectronics, for example, CNT-based interconnects are a promising alternative to conventional
Cu interconnects. However, even in the academic research society, the resistive characteristics
have not yet been systematically investigated. This is because these characteristics are very
sensitive to the protocol and the measurement conditions. Furthermore, since the individual CNT
reaches the nanometre dimension, the contact resistance has a larger relative impact on the
measurement. These bottlenecks impede not only the above-mentioned interconnect application but
also developments of
...