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IEC 60747-8
Edition 3.0 2021-06
INTERNATIONAL
STANDARD
AMENDMENT 1
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
IEC 60747-8:2010-12/AMD1:2021-06(en)
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IEC 60747-8
Edition 3.0 2021-06
INTERNATIONAL
STANDARD
AMENDMENT 1
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.30 ISBN 978-2-8322-9851-0
– 2 – IEC 60747-8:2010/AMD1:2021
© IEC 2021
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 8: Field-effect transistors
AMENDMENT 1
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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9) Attention is drawn to the possibility that some of the elements of this document may be the subject of patent
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Amendment 1 to IEC 60747-8:2021 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this Amendment is based on the following documents:
Draft Report on voting
47E/726/CDV 47E/744/RVC
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Amendment is English.
© IEC 2021
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at /members_experts/refdocs. The main document types developed by IEC are
described in greater detail at /standardsdev/publications/.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 4 – IEC 60747-8:2010/AMD1:2021
© IEC 2021
3.4 Conventional used terms
Replace the existing Table 1 title and whole table in this subclause with the following new
Table 1:
Table 1 – Terms for MOSFET in this document and the conventional used
terms for the inverse diode integrated in the MOSFETs for N-channel
Letter Deprecated terms for inverse diode with
Preferred terms
symbol MOSFET in off-state
Drain-source reverse voltage V Inverse diode forward voltage
SD
MOSFET forward recovery current I Inverse diode reverse recovery current
fr
MOSFET peak forward recovery current I Inverse diode pea
...