IEC TR 62878-2-8:2021

Device embedding assembly technology - Part 2-8: Guidelines - Warpage control of active device embedded substrate

IEC TR 62878-2-8:2021

Name:IEC TR 62878-2-8:2021   Standard name:Device embedding assembly technology - Part 2-8: Guidelines - Warpage control of active device embedded substrate
Standard number:IEC TR 62878-2-8:2021   language:English language
Release Date:06-Jul-2021   technical committee:TC 91 - Electronics assembly technology
Drafting committee:WG 6 - TC 91/WG 6   ICS number:31.180 - Printed circuits and boards

IEC TR 62878-2-8
Edition 1.0 2021-07
TECHNICAL
REPORT
colour
inside
Device embedding assembly technology –
Part 2-8: Guidelines – Warpage control of active device embedded substrate




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IEC TR 62878-2-8
Edition 1.0 2021-07
TECHNICAL
REPORT
colour
inside
Device embedding assembly technology –

Part 2-8: Guidelines – Warpage control of active device embedded substrate

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.180; 31.190 ISBN 978-2-8322-9953-1

– 2 – IEC TR 62878-2-8:2021 © IEC 2021
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Warpage driving force and resistance . 6
4.1 General . 6
4.2 Warpage driving force . 6
4.3 Warpage resistance . 6
4.4 Determining parameters . 7
5 Guideline for warpage of active device embedded substrate . 9
5.1 General . 9
5.2 Rigidity . 9
5.3 Neutral axis . 9
5.4 Typical example of low rigidity case . 10
5.5 Typical example of high rigidity case . 11
6 Conclusion . 13
Bibliography . 14

Figure 1 – Warpage behaviour of device embedded substrate during heating and
cooling . 6
Figure 2 – Relationship between warpage and rigidity . 7
Figure 3 – Parameters determining warpage . 7
Figure 4 – Effects of dummy Cu design on warpage . 8
Figure 5 – Neutral axis of device embedded substrate . 9
Figure 6 – Warpage behaviour of active device embedded substrate during heating
and cooling . 10
Figure 7 – Measured and simulated warpage results of die embedded substrates with
low rigidity . 11
Figure 8 – Structure of die embedded package with high rigidity . 12
Figure 9 – Simulated results on effect of die thickness on die embedded package
warpage . 12

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
DEVICE EMBEDDING ASSEMBLY TECHNOLOGY –

Part 2-8: Guidelines –
Warpage control of active device embedded substrate

FOREWORD
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IEC TR 62878-2-8, which is a technical report, has been prepared by IEC technical committee
91: Electronics assembly technology.
The text of this Technical Report is based on the following documents:
Draft Report on voting
91/1649/DTR 91/1721/RVDTR
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Report is English.

– 4 – IEC TR 62878-2-8:2021 © IEC 2021
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement,
available at /members_experts/refdocs. The main document types developed by
IEC are described in greater detail at /standardsdev/publications.
A list of all parts in the IEC 62878 series, published under the general title Device embedding
assembly technology, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates that it
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contents. Users should therefore print this document using a colour printer.

DEVICE EMBEDDING ASSEMBLY TECHNOLOGY –

Part 2-8: Guidelines –
Warpage control of active device embedded substrate

1 Scope
This part of IEC 62878 describes a warpage control of active device embedded substrate
along with parameters for determining warpage, which are useful during package assembly.
Warpage results are explained using warpage driving force, resistance and neutral axis, for
typical die embedded substrate, where the discrete active dies are placed in the core of
substrate and interconnected to the substrate by direct Cu bonding. The same principles are
applicable in other device embedded substrates. Even though the detailed structure of other
device embedded substrates might be different, the origin and determination of the
parameters of warpage are the same and thus the purpose of this report is to help engineers
improve the warpage behaviours of their products by applying this principle.
2 Normative references
IEC 60194 (all parts), Printed boards design, manufacture and assembly – Vocabulary
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 60194 and the
following apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
warpage
deviation from uniform flatness of the substrate for the range of thermal conditions
experienced during the package to board assembly
Note 1 to entry: Warpage during board assembly can cause the device terminals to have open or short circuit
connections after the reflow soldering operation. Certain package types, such as BGAs (ball grid arrays), have
been found to be more susceptible to component warpage [1] .
Note 2 to entry: Package warpage depends on many factors including CTE mismatch between device
constituents, assembly process, package design geometries, top and embedded die, substrate, etc. (x, y, & z). In
addition, it can be related with use of IHS (integrated heat spreader), stiffener, or overmold (geometries and
material choices include sealant/adhesives used), and other technology aspects of embedded design, embedded
and external caps, use of GaA vs. SiO2, etc.
—————————
Numbers in square brackets refer to the Bibliography.

– 6 – IEC TR 62878-2-8:2021 © IEC 2021
4 Warpage driving force and resistance
4.1 General
Warpage of device embedded substrate can be related with many parameters which include
properties, thickness, Cu ratio, routing and process history. The dimensions of embedded die
including t
...

  • Relates Information
  • ISO 8130-9:1992

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    09-28
  • EN 352-2:2020/FprA1

    EN 352-2:2021/oprA1:2023
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  • IEC TS 61158-4:1999

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    09-28
  • HD 566 S1:1990

    HD 566 S1:1998
    09-28
  • ISO 5131:1982/Amd 1:1992

    ISO 5131:1982/Amd 1:1992
    09-28
  • EN 60598-2-22:1990

    EN 60598-2-22:1996
    09-27
  • ISO 8504-2:1992

    ISO 8504-2:1992 - Preparation of steel substrates before application of paints and related products -- Surface preparation methods
    09-27
  • EN 12165:2024

    prEN 12165:2022
    09-27
  • IEC TS 61158-6:1999

    IEC TS 61158-6:1999 - Digital data communications for measurement and control - Fieldbus for use in industrial control systems - Part 6: Application Layer protocol specification Released:3/24/1999 Isbn:2831847613
    09-27
  • ISO 4252:1992

    ISO 4252:1992 - Agricultural tractors -- Operator's workplace, access and exit -- Dimensions
    09-27