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IGBT power module FF1000R17IE4

By.Johns 2024-08-09 01:46:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction Since the IGBT module is a MOSFET structure, the gate of the IGBT is electrically isolated from the emitter to the emitter through a layer of oxide film. Since this oxide film is very thin, its breakdown voltage is generally 20 ~ 30V. Therefore, the gate

IGBT power module FF1000R17IE4

Since the IGBT module is a MOSFET structure, the gate of the IGBT is electrically isolated from the emitter to the emitter through a layer of oxide film. Since this oxide film is very thin, its breakdown voltage is generally 20 ~ 30V. Therefore, the gate breakdown is one of the common reasons for the failure of IGBT due to static electricity. So pay attention to the following: When using the module, try not to touch the drive terminal portion by hand, when you need to touch the module terminal, you must first discharge the electrostatic electrostatic electrostatic electrostatic electrostatically on the body, and then touch When connecting the module to the terminal with a conductive material, do not answer the module before the wiring is not connected; try to operate well in the bottom plate.




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