IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite full-controlled voltage driving power semiconductor device consisting of BJT (bipolarized triode) and MOS (insulated gate field effect tube), and MOSFET The high input impedance and the advantage of the low-conducting pressure drop of GTR. GTR saturation pressure is reduced, the current carrier density is large, but the drive current is large; the MOSFET drive power is small, the switching speed is fast, but the conduction pressure decreases, and the current density is small. The IGBT combines the advantages of the above two devices, and the driving power is small and the saturation pressure is reduced. It is very suitable for variable flow systems such as AC motor, frequency converter, switching power supply, lighting circuit, traction transmission, etc..
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