The transfer characteristic of the IGBT refers to the relationship curve between the output drain current ID and the gate source voltage UGS. It is the same as the MOSFET's transfer characteristics, and when the gate source voltage is less than the turning voltage UGS (TH), the IGBT is in a shutdown state. Within the most drain current range after IGBT, ID is linearly related to UGS. The highest gate source voltage is limited by the maximum drain current, and its optimum value is generally taken about 15V.
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