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IXYS MCC250-18io1 fast recovery module

By.Johns 2024-08-08 17:36:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction The trigger and shutdown of the IGBT requires a forward voltage and a negative voltage between the gate and the base, and the gate voltage can be generated by different drive circuits. When these driver circuits are selected, they must be performed based

IXYS MCC250-18io1 fast recovery module

The trigger and shutdown of the IGBT requires a forward voltage and a negative voltage between the gate and the base, and the gate voltage can be generated by different drive circuits. When these driver circuits are selected, they must be performed based on the following parameters: the requirements of the device turn off the offset, the requirements of the gate charge, the resistance requirement, and the power supply. Because the IGBT gate-emitter impedance is large, the MOSFET drive technology can be used to trigger, but since the IGBT input capacitance is larger than the MOSFET is large, the turn-off bias of IGBT should be higher than the bias supply provided by many MOSFET drive circuits.



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 IXYS MCC250-18io1 fast recovery module

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