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IXYS PSD62/18 Diode Rectifier Bridge Module

By.Johns 2024-08-08 17:18:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction IGBT is natural evolution of a vertical power MOSFET with strong current, high voltage applications and fast terminal devices. Since a high breakdown voltage BVDSS requires a source leakage channel, this channel has a high resistivity, thus causes the pow

IXYS PSD62/18 Diode Rectifier Bridge Module

IGBT is natural evolution of a vertical power MOSFET with strong current, high voltage applications and fast terminal devices. Since a high breakdown voltage BVDSS requires a source leakage channel, this channel has a high resistivity, thus causes the power MOSFET with the RDS (ON) numerical feature, and IGBT eliminates these existing power MOSFETs. Major shortcomings. Although the latest generation of power MOSFET devices greatly improve the RDS (ON) characteristics, the power conduction loss is still much higher than IGBT technology at high levels. Lower pressure drop, converted into a low VCE (SAT) capabilities, as well as the structure of the IGBT, supports higher current density compared to the same standard bipolar device, and simplifies the schematic of the IGBT driver.




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