IGBT is an insulated Gate Bipolar Transistor, and IGBT is a device composed of MOSFET and bipolar transistors. Its input is extremely MOSFET. The output is extremely PNP transistor, which combines the advantages of these two devices, both of which have MOSFET device drive power. The advantages of small and switching speed, and has the advantage of decreased bipolar device saturation pressure and has a large capacity, and its frequency characteristics are between MOSFETs and power transistors, which can work in a few tens of KHz frequently, in modern power electronics The technique has been more widely used in technology, which dominates in the high frequency, and the medium power application is dominated.
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