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BSM200GAR120DLC Infineon IGBT module

By.Johns 2024-08-08 16:16:01 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction If a drive positive voltage is applied between the gate and the emitter of the IGBT, the MOSFET is turned on, so that the collector of the PNP transistor is lowered between the base and the base is lowered; if the gate and emission of the IGBT The voltage

BSM200GAR120DLC Infineon IGBT module

If a drive positive voltage is applied between the gate and the emitter of the IGBT, the MOSFET is turned on, so that the collector of the PNP transistor is lowered between the base and the base is lowered; if the gate and emission of the IGBT The voltage is 0 V, then the MOS is cut off, and the supply of the PNP transistor base current is cut so that the transistor is turned off. The IGBT is also the same as the MOSFET, and a DC voltage of more than ten V is applied between its gate-emitting poles, only the leakage current flows through the UA, basically consumes power.



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