German flat thyristor mold T551N65TOF T551N70TOF T1620N65TOF

Introduction The switching characteristic of an IGBT refers to the relationship between the drain current and the drain-source voltage. When the IGBT is in the on state, its B value is extremely low because its PNP transistor is a wide base transistor. Although the eq

German flat thyristor mold T551N65TOF T551N70TOF T1620N65TOF

The switching characteristic of an IGBT refers to the relationship between the drain current and the drain-source voltage. When the IGBT is in the on state, its B value is extremely low because its PNP transistor is a wide base transistor. Although the equivalent circuit is a Darlington structure, the current flowing through the MOSFET becomes the main part of the total IGBT current.


German flat thyristor mold T551N65TOF T551N70TOF T1620N65TOF
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