The switching characteristic of an IGBT refers to the relationship between the drain current and the drain-source voltage. When the IGBT is in the on state, its B value is extremely low because its PNP transistor is a wide base transistor. Although the equivalent circuit is a Darlington structure, the current flowing through the MOSFET becomes the main part of the total IGBT current.
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Infineon InfineonFF300R12ME4
STONKER electronic transformer SVC-220-F-II 22KW 380V to 200V
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WESTCODE SCR N060RH08 N060RH10
R0929LS12A WESTCODE SCR
IR Spiral Diode Module 50PFR40W 50PFR80 50PFR80W 50PFR120
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