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French fuse DN00UB69V315L K330243 DN00UB69V350L L330244

By.Johns 2024-08-06 21:56:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and also has MOSF

French fuse DN00UB69V315L K330243 DN00UB69V350L L330244

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and also has MOSFET advantages of high input impedance and low on-voltage drop of GTR. The GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the on-state voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, and the driving power is small and the saturation voltage is reduced. It is very suitable for converter systems with DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives, etc.



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