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5STF15F2040 SCR tridirectional thyristor

By.Johns 2024-08-06 21:18:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction The switching function of the IGBT is to form a channel by adding a forward gate voltage to provide a base current to the PNP (originally NPN) transistor, so that the IGBT is turned on. On the contrary, adding the reverse gate voltage eliminates the chann

5STF15F2040 SCR tridirectional thyristor

The switching function of the IGBT is to form a channel by adding a forward gate voltage to provide a base current to the PNP (originally NPN) transistor, so that the IGBT is turned on. On the contrary, adding the reverse gate voltage eliminates the channel, cuts off the base current, and turns off the IGBT. The driving method of IGBT is basically the same as that of MOSFET. It only needs to control the input pole N-channel MOSFET, so it has high input impedance characteristics. After the channel of the MOSFET is formed, holes (minor carriers) are injected from the P+ base to the N-layer, and the conductance of the N-layer is modulated to reduce the resistance of the N-layer, so that the IGBT also has a low voltage at high voltage. on-state voltage.




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EACO non-inductive capacitor SHB-1200-1.0-2VB1 SHB-1200-1.5-2VB1
IXYS SCR model MCC94-22io1B

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