German IGBT module FZ3600R17HP4_B2 FZ3600R17HP4_B9 FZ3600R1

Introduction The switching characteristic of an IGBT refers to the relationship between the drain current and the drain-source voltage. When the IGBT is in the on state, its B value is extremely low because its PNP transistor is a wide base transistor. Although the eq

German IGBT module FZ3600R17HP4_B2 FZ3600R17HP4_B9 FZ3600R1

The switching characteristic of an IGBT refers to the relationship between the drain current and the drain-source voltage. When the IGBT is in the on state, its B value is extremely low because its PNP transistor is a wide base transistor. Although the equivalent circuit is a Darlington structure, the current flowing through the MOSFET becomes the main part of the total IGBT current.



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