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German flat diode die D4810N24T VF D4810N22T VF D4810N20T VF

By.Johns 2024-08-06 21:10:01 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction The transfer characteristic of IGBT refers to the relation curve between the output drain current Id and the gate-source voltage Ugs. It is the same as the transfer characteristic of MOSFET, when the gate-source voltage is less than the turn-on voltage Ug

German flat diode die D4810N24T VF D4810N22T VF D4810N20T VF

The transfer characteristic of IGBT refers to the relation curve between the output drain current Id and the gate-source voltage Ugs. It is the same as the transfer characteristic of MOSFET, when the gate-source voltage is less than the turn-on voltage Ugs(th), the IGBT is turned off. Id has a linear relationship with Ugs over most of the drain current range after the IGBT is turned on. The maximum gate-source voltage is limited by the maximum drain current, and its optimum value is generally around 15V.



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