Triggering and turn-off of IGBT requires adding forward voltage and negative voltage between its gate and base, and the gate voltage can be generated by different driving circuits. When selecting these driver circuits, it must be based on the following parameters: device turn-off bias requirements, gate charge requirements, robustness requirements, and power supply conditions. Because of the large gate-emitter impedance of the IGBT, MOSFET drive techniques can be used for triggering, but since the input capacitance of the IGBT is larger than that of the MOSFET, the turn-off bias of the IGBT should be higher than that provided by many MOSFET drive circuits.
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Ferraz fuse A070UD32LI550 A070UD32LI315
Fast fuse RS9-800V/1600A
German IGBT mold F3L300R12PT4_B26 F3L300R12MT4_B23 F3L300R
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Siemens fuse 3NE8022-1 3NE8024-1
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ferraz fuse FR10AM50V1/2/4/6/8/10/12/16/20/25/32A500V
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