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Toshiba GTO SCR thyristor SG3000GX26 SG3000GX21

By.Johns 2024-08-06 19:48:02 Share on facebook Share on Google Share on Instagram Share on Pinterest Share on Twitter Share on Tumblr Share on WhatsApp Share on Telegram Share on Reddit Visit our Instagram

Introduction If a positive driving voltage is applied between the gate and the emitter of the IGBT, the MOSFET is turned on, so that the collector and the base of the PNP transistor are in a low-resistance state and the transistor is turned on; if the gate and the emi

Toshiba GTO SCR thyristor SG3000GX26 SG3000GX21

If a positive driving voltage is applied between the gate and the emitter of the IGBT, the MOSFET is turned on, so that the collector and the base of the PNP transistor are in a low-resistance state and the transistor is turned on; if the gate and the emitter of the IGBT are turned on When the voltage between the poles is 0V, the MOS is turned off, and the supply of the base current of the PNP transistor is cut off, so that the transistor is turned off. IGBT, like MOSFET, is also a voltage-controlled device. A DC voltage of more than ten V is applied between its gate and emitter. Only the leakage current at the uA level flows, and basically no power is consumed.



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