German flat thyristor mold T430N14TOF T430N12TOF T470N16TOF T470N14

Introduction IGBT is Insulated Gate Bipolar Transistor. IGBT is a device composed of MOSFET and bipolar transistor. Its input is extremely MOSFET and its output is extremely PNP transistor. It combines the advantages of these two devices and has both the driving power

German flat thyristor mold T430N14TOF T430N12TOF T470N16TOF T470N14

IGBT is Insulated Gate Bipolar Transistor. IGBT is a device composed of MOSFET and bipolar transistor. Its input is extremely MOSFET and its output is extremely PNP transistor. It combines the advantages of these two devices and has both the driving power of MOSFET devices. It has the advantages of small size and fast switching speed, and has the advantages of reduced saturation voltage and large capacity of bipolar devices. Its frequency characteristics are between MOSFETs and power transistors, and can work normally in the frequency range of tens of kHz. In modern power electronics The technology has become more and more widely used, occupying a dominant position in high- and medium-power applications at higher frequencies.




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