The switch function of the IGBT is to provide a base current to the PNP (original NPN) transistor by adding a channel to the gate voltage to provide the base current to the IGBT. Conversely, add a reverse door voltage to eliminate the channel, cut off the base current, and turn the IGBT. The IGBT drive method and MOSFET are basically the same, and simply control the input extreme N-channel MOSFET, there is high input impedance characteristics. When the channel of the MOSFET is formed, the N-layer is injected into the N-layer hole (less) from the P + base, and the N-layer is modulated, reducing the resistance of the N-layer, making the IGBT at a high voltage, also have low Tong-state voltage.
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